Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

N-Channel 650 V (D-S) MOSFET

Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics. Structure Epitaxial planar type PNP silicon transistor

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • 150 °C operating temperature

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.44Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS??Power Transistor

文件：662.11 Kbytes Page：15 Pages

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes Page：16 Pages

Cool MOS??Power Transistor

文件：662.11 Kbytes Page：15 Pages

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes Page：16 Pages

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：680.24 Kbytes Page：12 Pages

Cool MOS Power Transistor

文件：647.24 Kbytes Page：12 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：680.24 Kbytes Page：12 Pages

Cool MOS Power Transistor

文件：647.24 Kbytes Page：12 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.85356 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.03276 Mbytes Page：8 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.94216 Mbytes Page：9 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：220.51 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：297.95 Kbytes Page：2 Pages