SPP11N60C3价格

参考价格:¥11.9983

型号:SPP11N60C3 品牌:Infineon 备注:这里有SPP11N60C3多少钱,2025年最近7天走势,今日出价,今日竞价,SPP11N60C3批发/采购报价,SPP11N60C3行情走势销售排行榜,SPP11N60C3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SPP11N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
SPP11N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
SPP11N60C3

N-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
SPP11N60C3

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
SPP11N60C3

CoolMOS™PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
SPP11N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件:659.64 Kbytes Page:16 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
SPP11N60C3

CoolMOS??PowerTransistor

文件:662.11 Kbytes Page:15 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

CoolMOS™PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

CoolMOS??PowerTransistor

文件:662.11 Kbytes Page:15 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件:659.64 Kbytes Page:16 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

CoolMOS™PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-Channel650V(D-S)MOSFET

文件:1.84713 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPP11N60C3产品属性

  • 类型

    描述

  • 型号

    SPP11N60C3

  • 功能描述

    MOSFET COOL MOS N-CH 600V 11A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-7-24 10:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
Infineon(英飞凌)
24+
PG-TO-220
10538
原厂可订货,技术支持,直接渠道。可签保供合同
INFINEON/英飞凌
23+/24+
TO220
9865
用芯服务,原装正品低压MOS管
INFINE
2410+
to-220
28000
原装正品.假一赔百.正规渠道.原厂追溯.
INFINEON/英飞凌
24+
TO-220
33500
全新进口原装现货,假一罚十
INFINEON
22+
TO220
178565
原装现货库存.价格优势
INFINOEN
24+
TO-220
90000
一级代理进口原装现货、假一罚十价格合理
INFINEO
2016+
TO-220
6528
房间原装进口现货假一赔十
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价SPP11N60C3即刻询购立享优惠#长期有货
Infineon
24+
NA
3681
进口原装正品优势供应

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