位置：首页 > IC中文资料第1118页 > SPP08P06PG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP08P06PG | P-Channel Enhancement mode Avalanche rated dv/dt rated 文件：843.26 Kbytes Page：10 Pages | Infineon 英飞凌 |   | |
Dual-P Enhancement MOSFET Features VDS=-60V, ID=-8A RDS(ON)=570mΩ@VGS=-10V(Typ.) RDS(ON)=105mΩ@VGS=-4.5V(Typ.) Main Applications Battery Protection Load Switch Power Management | GWSEMI 唯圣电子 | | ||
SIPMOS짰 Power-Transistor 文件：605.25 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
isc P-Channel MOSFET Transistor 文件：297.89 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SIPMOS Power-Transistor 文件：96.95 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor 文件：273.54 Kbytes Page：8 Pages | Infineon 英飞凌 | |
SPP08P06PG产品属性
- 类型
描述
- 型号
SPP08P06PG
- 功能描述
MOSFET P-KANAL
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3343 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
22+ |
TO-220-3 |
20000 |
公司只有原装 品质保障 |
|||
INFINEON/英飞凌 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
INFINEON |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
INFINEON/英飞凌 |
23+ |
PG-TO220-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VBsemi |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
|||
VBsemi |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
INFINEON |
25+ |
TO-263 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
SPP08P06PG芯片相关品牌
SPP08P06PG规格书下载地址
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2020-11-10
DdatasheetPDF页码索引
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