Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perf

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes Page：14 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes Page：14 Pages

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes Page：14 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes Page：14 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS??Power Transistor

文件：251.72 Kbytes Page：10 Pages

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：362.25 Kbytes Page：10 Pages

Cool MOS??Power Transistor

文件：251.72 Kbytes Page：10 Pages

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：362.25 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N-Channel 650 V (D-S) MOSFET

文件：2.52205 Mbytes Page：8 Pages

IGBT with integrated diode in packages offering space saving advantage

文件：1.72801 Mbytes Page：16 Pages

Power MOSFET

文件：193.74 Kbytes Page：3 Pages

N-CHANNEL SILICON POWER MOSFETFeatures

文件：580.87 Kbytes Page：5 Pages