Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perf

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes Page：14 Pages

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes Page：14 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes Page：14 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes Page：14 Pages

Cool MOS??Power Transistor

文件：251.72 Kbytes Page：10 Pages

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：362.25 Kbytes Page：10 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS??Power Transistor

文件：251.72 Kbytes Page：10 Pages

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：362.25 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N-Channel 650 V (D-S) MOSFET

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IGBT with integrated diode in packages offering space saving advantage

文件：1.72801 Mbytes Page：16 Pages

Power MOSFET

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N-CHANNEL SILICON POWER MOSFETFeatures

文件：580.87 Kbytes Page：5 Pages