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SPP03N60C3价格
参考价格：￥4.5612
型号：SPP03N60C3XKSA1 品牌：Infineon 备注：这里有SPP03N60C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPP03N60C3批发/采购报价，SPP03N60C3行情走势销售排行榜，SPP03N60C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP03N60C3 | Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 |   | |
SPP03N60C3 | N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | |
SPP03N60C3 | N-Channel 650V (D-S) Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction | VBSEMI 微碧半导体 | | |
SPP03N60C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
SPP03N60C3 | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：599.57 Kbytes Page：14 Pages | Infineon 英飞凌 | | |
SPP03N60C3 | COOL MOS POWER TRANSISTOR 文件：1.99914 Mbytes Page：14 Pages | Infineon 英飞凌 | | |
COOL MOS POWER TRANSISTOR 文件：1.99914 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：599.57 Kbytes Page：14 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：3.20783 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：599.57 Kbytes Page：14 Pages | Infineon 英飞凌 | |
SPP03N60C3产品属性
- 类型
描述
- 型号
SPP03N60C3
- 功能描述
MOSFET MOSFET N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
494 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon Technologies |
22+ |
9000 |
原厂渠道,现货配单 |
||||
INFINEON |
23+24 |
TO-220 |
56983 |
原装正品,原盘原标,提供BOM一站式配单 |
|||
infineon/英飞凌 |
24+ |
TO220 |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON |
NA |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON/英飞凌 |
2022+ |
500 |
6600 |
只做原装,假一罚十,长期供货。 |
|||
INFINEON |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
INFINEON |
25+ |
TO220 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
SPP03N60C3规格书下载地址
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