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SPP03N60S5价格
参考价格：￥4.6857
型号：SPP03N60S5 品牌：INF 备注：这里有SPP03N60S5多少钱，2025年最近7天走势，今日出价，今日竞价，SPP03N60S5批发/采购报价，SPP03N60S5行情走势销售排行榜，SPP03N60S5报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP03N60S5 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 |   | |
SPP03N60S5 | N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perf | ISC 无锡固电 | | |
SPP03N60S5 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
SPP03N60S5 | Cool MOS??Power Transistor 文件：251.72 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
SPP03N60S5 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：362.25 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
Cool MOS??Power Transistor 文件：251.72 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：362.25 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perf | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：2.54815 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.51693 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
SPP03N60S5产品属性
- 类型
描述
- 型号
SPP03N60S5
- 功能描述
MOSFET COOL MOS N-CH 600V 3.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
TO220 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
22+ |
TO-220 |
56315 |
原装现货库存.价格优势 |
|||
英飞凌 |
06+ |
TO-220 |
4500 |
原装 |
|||
Infineon(英飞凌) |
24+ |
TO-220 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
24+ |
TO-220 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
24190 |
原装正品代理渠道价格优势 |
|||
INFINEON |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON/英飞凌 |
25+ |
TO-220 |
1023 |
全新原装正品支持含税 |
|||
INFINEON |
NEW |
T0-220 |
7936 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
SPP03N60S5规格书下载地址
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DdatasheetPDF页码索引
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