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SPD07N60C3价格
参考价格：￥5.5738
型号：SPD07N60C3 品牌：Infineon 备注：这里有SPD07N60C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPD07N60C3批发/采购报价，SPD07N60C3行情走势销售排行榜，SPD07N60C3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD07N60C3 | Cool MOS Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; Rohs com | Infineon 英飞凌 |   | |
SPD07N60C3 | N-Channel MOSFET Transistor • DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPD07N60C3 | Cool MOS Power Transistor 文件：953.21 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
SPD07N60C3 | Cool MOS Power Transistor 文件：980.68 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
Cool MOS Power Transistor 文件：980.68 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | ||
Cool MOS Power Transistor 文件：980.68 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：625.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
N-Channel 65 0V (D-S)Power MOSFET 文件：2.12298 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
SPD07N60C3产品属性
- 类型
描述
- 型号
SPD07N60C3
- 功能描述
MOSFET MOSFET N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
160002 |
明嘉莱只做原装正品现货 |
||||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON |
24+ |
PG-TO252-3 |
5000 |
全新原装正品,现货销售 |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
INFINEON/英飞凌 |
23+ |
TO252-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Infineon/英飞凌 |
24+ |
TO-252-2(DPAK) |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
1331+ |
DPAK |
32499 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon/英飞凌 |
21+ |
TO-252-2(DPAK) |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
SPD07N60C3规格书下载地址
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