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SPP07N60C3价格
参考价格：￥7.5125
型号：SPP07N60C3 品牌：Infineon 备注：这里有SPP07N60C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPP07N60C3批发/采购报价，SPP07N60C3行情走势销售排行榜，SPP07N60C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP07N60C3 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS complian | Infineon 英飞凌 |   | |
SPP07N60C3 | N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | |
SPP07N60C3 | New revolutionary high voltage technology Ultra low gate charge 文件：1.30229 Mbytes Page：15 Pages | Infineon 英飞凌 | | |
SPP07N60C3 | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：625.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | |
SPP07N60C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
New revolutionary high voltage technology Ultra low gate charge 文件：1.30229 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：625.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | ||
Cool MOS Power Transistor 文件：980.68 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：625.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
N-Channel 65 0V (D-S)Power MOSFET 文件：2.12298 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
SPP07N60C3产品属性
- 类型
描述
- 型号
SPP07N60C3
- 功能描述
MOSFET COOL MOS N-CH 650V 7.3A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
INFINEON/英飞凌 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
INFINEON |
0743+ |
TO220 |
6000 |
绝对原装自己现货 |
|||
Infineon/英飞凌 |
21+ |
TO-220(TO-220-3) |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Infineon/英飞凌 |
24+ |
TO-220(TO-220-3) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON/英飞凌 |
24+ |
TO220 |
9600 |
原装现货,优势供应,支持实单! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
INFINEO |
25+ |
TO-220 |
30 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
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SPP07N60C3规格书下载地址
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2020-11-10
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