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SPP07N60C3价格
参考价格：￥7.5125
型号：SPP07N60C3 品牌：Infineon 备注：这里有SPP07N60C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPP07N60C3批发/采购报价，SPP07N60C3行情走势销售排行榜，SPP07N60C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP07N60C3 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS complian | Infineon 英飞凌 |   | |
SPP07N60C3 | N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | |
SPP07N60C3 | New revolutionary high voltage technology Ultra low gate charge 文件：1.30229 Mbytes Page：15 Pages | Infineon 英飞凌 | | |
SPP07N60C3 | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：625.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | |
SPP07N60C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
New revolutionary high voltage technology Ultra low gate charge 文件：1.30229 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：625.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | ||
Cool MOS Power Transistor 文件：980.68 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：625.63 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
N-Channel 65 0V (D-S)Power MOSFET 文件：2.12298 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
SPP07N60C3产品属性
- 类型
描述
- 型号
SPP07N60C3
- 功能描述
MOSFET COOL MOS N-CH 650V 7.3A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
46048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
104 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
Infineon/英飞凌 |
24+ |
TO-220(TO-220-3) |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价SPP07N60C3即刻询购立享优惠#长期有货 |
|||
INF |
1516+ |
TO-220 |
35 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
NEW |
T0-220 |
7936 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON/英飞凌 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
21+ |
TO-220 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
INFINEON |
23+ |
TO-220 |
6000 |
专做原装正品,假一罚百! |
SPP07N60C3规格书下载地址
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2020-11-10
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