Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS complian

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：1.39471 Mbytes Page：13 Pages

Isc N-Channel MOSFET Transistor

文件：189.64 Kbytes Page：2 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10803 Mbytes Page：10 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：1.39471 Mbytes Page：13 Pages

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

Cool MOS Power Transistor

文件：980.68 Kbytes Page：13 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：625.63 Kbytes Page：15 Pages

N-Channel 65 0V (D-S)Power MOSFET

文件：2.12298 Mbytes Page：10 Pages