Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.95Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS Power Transistor

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Cool MOS Power Transistor

文件：775.24 Kbytes Page：11 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Cool MOS Power Transistor

文件：775.24 Kbytes Page：11 Pages

Cool MOS Power Transistor

文件：752.66 Kbytes Page：11 Pages

包装：卷带（TR） 描述：MOSFET N-CH 560V 4.5A DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.4A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.7Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET 500 V, 2.7 

文件：127.75 Kbytes Page：9 Pages

N-Channel Power MOSFET

文件：124.28 Kbytes Page：8 Pages

N-Channel Power MOSFET 500 V, 2.7 

文件：127.75 Kbytes Page：9 Pages