包装：卷带（TR） 描述：MOSFET N-CH 560V 4.5A DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.95Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • Improved transcondutance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

N-Channel 6 50V (D-S) Power MOSFET

文件：2.12878 Mbytes Page：10 Pages

Cool MOS Power Transistor

文件：11.43318 Mbytes Page：13 Pages