isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

N-Channel 900-V (D-S) MOSFET

Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

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CoolMOSTM Power Transistor

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