Cool MOS??Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

isc N-Channel MOSFET Transistor

• FEATURES • New revolutionary high voltage technology • Ultra low gate charge • High peak current capability • Improved transconductance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS??Power Transistor

文件：677.4 Kbytes Page：13 Pages

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：295.55 Kbytes Page：10 Pages

CoolMOSTM Power Transistor

文件：509.51 Kbytes Page：10 Pages

Material Content Data Sheet

文件：32.84 Kbytes Page：1 Pages

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：295.55 Kbytes Page：10 Pages

CoolMOSTM Power Transistor

文件：509.51 Kbytes Page：10 Pages

Material Content Data Sheet

文件：32.84 Kbytes Page：1 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

11A, 812V N-CHANNEL POWER MOSFET

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800V N-Channel MOSFET

文件：266.71 Kbytes Page：10 Pages