IXFH11N80价格

参考价格:¥41.8631

型号:IXFH11N80 品牌:IXYS 备注:这里有IXFH11N80多少钱,2025年最近7天走势,今日出价,今日竞价,IXFH11N80批发/采购报价,IXFH11N80行情走势销售排行榜,IXFH11N80报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IXFH11N80

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

IXYS

IXFH11N80

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

IXYS

11A, 812V N-CHANNEL POWER MOSFET

文件:165.26 Kbytes Page:4 Pages

UTC

友顺

800V N-Channel MOSFET

文件:266.71 Kbytes Page:10 Pages

SEMIHOW

IXFH11N80产品属性

  • 类型

    描述

  • 型号

    IXFH11N80

  • 功能描述

    MOSFET 11 Amps 800V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-14 13:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
22+
TO-247
25000
只做原装进口现货,专注配单
IXYS/艾赛斯
23+
TO-247
9766
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
23+
TO247
8000
只做原装现货
IXYS
22+
TO2473
9000
原厂渠道,现货配单
IXYS
24+
TO247
5000
只做原装公司现货
IXYS/艾赛斯
21+
TO247
10000
原装现货假一罚十
IXYS
24+
NA
3000
进口原装正品优势供应
IXYS
24+
TO-247
8866

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