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型号 功能描述 生产厂家 企业 LOGO 操作
11N80

11A, 812V N-CHANNEL  POWER MOSFET

The UTC 11N80 is an N-Channel power MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC 11N80 is suitable for high speed switching applications in power supplies, PWM motor controls, high efficient DC to • RDS(ON) <0.9Ω@VGS=10V,ID=5.5A \n• Low gate charge ( typical 60 nC) \n• High switching speed;

UTC

友顺

11N80

11A, 812V N-CHANNEL POWER MOSFET

文件:165.26 Kbytes Page:4 Pages

UTC

友顺

丝印代码:11N800;N-Channel Super Junction Power MOSFET

文件:589.84 Kbytes Page:8 Pages

RECTRON

丽正

丝印代码:11N800;N-Channel Super Junction Power MOSFET

文件:589.84 Kbytes Page:8 Pages

RECTRON

丽正

Cool MOS™ Power Transistor

INFINEON

英飞凌

Cool MOS??Power Transistor

文件:677.4 Kbytes Page:13 Pages

INFINEON

英飞凌

Mosfet

PINGWEI

11A, 812V N-CHANNEL POWER MOSFET

文件:165.26 Kbytes Page:4 Pages

UTC

友顺

11A, 812V N-CHANNEL POWER MOSFET

文件:165.26 Kbytes Page:4 Pages

UTC

友顺

11A, 812V N-CHANNEL POWER MOSFET

文件:165.26 Kbytes Page:4 Pages

UTC

友顺

11A, 812V N-CHANNEL POWER MOSFET

文件:165.26 Kbytes Page:4 Pages

UTC

友顺

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

IXYS

艾赛斯

MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

IXYS

艾赛斯

MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

IXYS

艾赛斯

11 AMP / 800 Volts 0.95 廓 N-Channel MOSFET

文件:147.38 Kbytes Page:3 Pages

SSDI

11N80产品属性

  • 类型

    描述

  • Vdss(V):

    800

  • Vgss(V):

    ±30

  • Id(A):

    11

  • Package:

    TO-3P/TO-230/TO-220F...

更新时间:2026-5-23 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
标准封装
28048
原厂渠道供应,大量现货,原型号开票。
INFINEON
10+
TO220
5
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
24+
TO220F
8540
只做原装正品现货或订货假一赔十!
INFINEON
20+
TO-3P
38900
原装优势主营型号-可开原型号增税票
FAIRCHILD
2018
TO-220F
60
全新 发货1-2天
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON
26+
TO220
86720
全新原装正品价格最实惠 假一赔百
INFINEON
23+
TO-3P
5000
原装正品,假一罚十
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
UTC/友顺
23+
TO-220
8400
专注配单,只做原装进口现货

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