Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching application

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes Page：14 Pages

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes Page：14 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes Page：14 Pages

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes Page：14 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N-Channel 650 V (D-S) MOSFET

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IGBT with integrated diode in packages offering space saving advantage

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Power MOSFET

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N-CHANNEL SILICON POWER MOSFETFeatures

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