Surface Mount Schottky-Rectifiers

Features Low forward voltage drop High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Output Rectification in DC/DC Converters, Polarity Protection, Free-wheeling diodes Commercial grade 1 Mechanical Data 1) Taped and ree

Schottky barrier rectifiers diodes

Forward Current: 1 A Reverse Voltage: 20 to 100 V Features • Max. solder temperature: 260 °C • Plastic material has UL classification 94V-0

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Plastic package has Underwriters Laborator Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capab

Surface Mount Schottky Barrier Rectifiers

REVERSE VOLTAGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Plastic package has Underwriters Laborator Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capab

SURFACE MOUNT SCHOTTKY

REVERSE VOLTAGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Plastic package has Underwriters Laborator Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capab

Schottky Diodes

Schottky barrier rectifiers diodes

文件：142.51 Kbytes Page：2 Pages

SMD Schottky Barrier Rectifier Diodes

文件：148.4 Kbytes Page：2 Pages

Surface Mount Schottky Rectifiers

文件：106.06 Kbytes Page：2 Pages

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)