Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

•75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

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封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 9A 32W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

IGBT with integrated diode in packages offering space saving advantage

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IGBT with integrated diode in packages offering space saving advantage

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POWER FIELD EFFECT TRANSISTOR

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