Dual N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchr

Dual N-Channel 60-V (D-S) MOSFET

CHANNEL PHOTO MULTIPLIER

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

1.5A, Low Noise, Fast Transient Response

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surface-acoustic-wave (SAW) resonator

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SPDT SUBMINIATURE POWER RELAY

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Guards against accidental disconnection of Computers, PDU’s, Servers and most Network Devices.

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