DualN-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •Fullylead(Pb)-freedevice •OptimizedQg,Qgd,andQgd/Qgsratioreduces switchingrelatedpowerloss •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchr

CHANNELPHOTOMULTIPLIER

Features •Ultrahighanodesensitivityupto107A/W •Extremelylowdarkcurrent,typically3pA@106gain •Verylowequivalentnoiseinput(downto10-17W) •Veryhighstabilityindarkcurrent(no”bursts”) •Highgainexceeding108 •Veryhighdynamicrange •Compactdimensions •W

CHANNELPHOTOMULTIPLIER

Features •Ultrahighanodesensitivityupto107A/W •Extremelylowdarkcurrent,typically3pA@106gain •Verylowequivalentnoiseinput(downto10-17W) •Veryhighstabilityindarkcurrent(no”bursts”) •Highgainexceeding108 •Veryhighdynamicrange •Compactdimensions •W

1.5A,LowNoise,FastTransientResponse

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surface-acoustic-wave(SAW)resonator

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SPDTSUBMINIATUREPOWERRELAY

文件：67.9 Kbytes Page：2 Pages