| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N and P-Channel Enhancement Mode Power MOSFET Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON) | TUOFENG 拓锋半导体 |   | ||
High Q, high self-resonant frequency Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Complementary High Density Trench MOSFET 文件：317.57 Kbytes Page：7 Pages | TUOFENG 拓锋半导体 | | ||
Binary reduction valve 文件：99.4 Kbytes Page：1 Pages | FESTOFesto Corporation. 费斯托费斯托（中国）有限公司 | | ||
N- and P-Channel 30 V (D-S) MOSFET 文件：1.22669 Mbytes Page：14 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Bourns(伯恩斯) |
24+ |
SIP-6-2.54mm |
42461 |
免费送样,账期支持,原厂直供,没有中间商赚差价 |
|||
BOURNS |
1135+ |
N/A |
1988 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
BOURNS/伯恩斯 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ZY |
23+ |
SOP-8 |
50000 |
原装正品 支持实单 |
|||
BOURNS |
25+ |
70 |
公司优势库存 热卖中! |
||||
MT台湾茂钿 |
25+ |
SOP8 |
15000 |
全新原装现货,价格优势 |
|||
BOURNS/伯恩斯 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
Bourns(伯恩斯) |
24+ |
标准封装 |
22663 |
我们只是原厂的搬运工 |
|||
Bychip |
23+ |
SOP8 |
10000 |
高品质替代,技术支持,参数选型 |
|||
BOURNS/伯恩斯 |
20+ |
DIP |
2000 |
原装现货 |
SIS4606芯片相关品牌
SIS4606规格书下载地址
SIS4606参数引脚图相关
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- SIS12VD
- SIS12VB
- SIS12VA
- SIS08T
- SIS07XE
- SIS07XD
- SIS07XB
- SIS07XA
SIS4606数据表相关新闻
SIS862DN-T1-GE3原装现货支持实单
SIS862DN-T1-GE3原装现货支持实单
2023-4-27SIT1021QTK
SIT1021QTK
2023-3-2SIS110DN-T1-GE3
SIS110DN-T1-GE3
2022-10-20SISS30LDN-T1-GE3
进口代理
2022-7-26SIR462DP
TO-3PF-3 MOSFET , 1200 V MOSFET , WDFN-8 SMD/SMT 1 Channel N-Channel 40 V MOSFET , TO-252-3 SMD/SMT P-Channel Enhancement 4.5 A MOSFET , SMD/SMT P-Channel AEC-Q101 MOSFET , TSSOP-8 SMD/SMT Enhancement 20 V MOSFET
2020-10-9SIR876ADP-T1-GE3
SIR876ADP-T1-GE3
2019-11-29
DdatasheetPDF页码索引
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