位置：首页 > IC中文资料第4767页 > SIS436DN-T1-GE3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIS436DN-T1-GE3 | N-Channel 30-V (D-S) MOSFET 文件：995.34 Kbytes Page：8 Pages | VBSEMI 微碧半导体 |   |
SIS436DN-T1-GE3产品属性
- 类型
描述
- 型号
SIS436DN-T1-GE3
- 功能描述
MOSFET 25V 16A 27.7W 10.5mohm @ 10V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
更新时间：2025-8-18 20:03:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
QFN |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
24+ |
NA/ |
16188 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
25+ |
DFN3.3X3.3 |
39746 |
VISHAY/威世全新特价SIS436DN-T1-GE3即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
25+ |
DFN3*3 |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
2450+ |
DFN3*3 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY/威世 |
2023+ |
DFN3*3 |
1000 |
原厂全新正品旗舰店优势现货 |
|||
VISHAY/威世 |
24+ |
DFN3*3 |
502667 |
免费送样原盒原包现货一手渠道联系 |
|||
VISHAY/威世 |
21+ |
DFN33 |
10000 |
原装现货假一罚十 |
|||
VISHAY |
23+ |
QFN-8 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
只做原装 |
24+ |
36520 |
一级代理/放心采购 |
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SIS436DN-T1-GE3数据表相关新闻
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DdatasheetPDF页码索引
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