Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

iscN-Channel MOSFET Transistor

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Power MOSFET

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib

Power MOSFET

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Power MOSFET

Power MOSFET

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Power MOSFET

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isc N-Channel Mosfet Transistor

DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

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