| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FB9N60A | PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower | IRF International Rectifier |  |   |
iscN-ChannelMosfetTransistor DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=8.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleD | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-channelEnhancementModePowerMOSFET 文件：374.44 Kbytes Page：6 Pages | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 |  | | |
N-ChannelMOSFET 文件：784.87 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
N-ChannelMOSFET 文件：784.87 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
IR |
25+23+ |
TO-220 |
20014 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
DIP-12 |
12500 |
进口原装!现货库存 |
|||
IR |
22+ |
TO220 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
|||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-220 |
7000 |
||||
IR |
23+ |
TO-220 |
3000 |
全新原装 |
|||
IR |
22+ |
TO-220 |
6000 |
终端可免费供样,支持BOM配单 |
|||
TAIYO/太诱 |
22+ |
2.5x4.5 |
100000 |
只做原装正品 |
FB9N60A芯片相关品牌
FB9N60A规格书下载地址
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FB9N60A数据表相关新闻
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2020-7-10FBML05B128G0KDBABJ4-MB
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2019-10-16FB260N
FB260N，全新原装当天发货或门市自取0755-82732291.
2019-8-25
DdatasheetPDF页码索引
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