isc N-Channel Mosfet Transistor

DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D

N-Channel 650V (D-S) Power MOSFET

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Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

N-channel Enhancement Mode Power MOSFET

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N-Channel MOSFET

文件：784.87 Kbytes Page：8 Pages

N-Channel MOSFET

文件：784.87 Kbytes Page：8 Pages

TTL HD74/HD74S Series

JIGH RELIABILITY CURRENT REGULATOR DIODES

40A Single-Phase Bridge Rectifier

SINGLE-PHASE BRIDGE RECTIFIER

40 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

INTEGRATED CIRCUIT PINOUTS

DUAL 4-INPUT EXPANDERS

DUAL 4-INPUT EXPANDERS

DUAL 4-INPUT EXPANDERS