isc N-Channel Mosfet Transistor

DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D

TO-220 MOS FETs 场效应管

丝印代码：9N60M6；N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters • Boost PFC converters Description The new MDmesh M6 t

丝印代码：9N60M2；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

丝印代码：9N60M2；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

丝印代码：9N60M2；N-channel 600 V, 0.76 ??typ., 4.8 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

N-Channel 650V (D-S) Power MOSFET

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PowerMOS transistors Avalanche energy rated

文件：41.63 Kbytes Page：7 Pages

PowerMOS transistors Avalanche energy rated

文件：102.87 Kbytes Page：9 Pages

PowerMOS transistors Avalanche energy rated

文件：41.63 Kbytes Page：7 Pages

PowerMOS transistors Avalanche energy rated

文件：41.63 Kbytes Page：7 Pages

PowerMOS transistors Avalanche energy rated

文件：102.87 Kbytes Page：9 Pages

TTL HD74/HD74S Series

JIGH RELIABILITY CURRENT REGULATOR DIODES

40A Single-Phase Bridge Rectifier

SINGLE-PHASE BRIDGE RECTIFIER

40 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

INTEGRATED CIRCUIT PINOUTS

DUAL 4-INPUT EXPANDERS

DUAL 4-INPUT EXPANDERS

DUAL 4-INPUT EXPANDERS