位置：首页 > IC中文资料第7398页 > SIHFR1N60A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR1N60A | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 |   | |
SIHFR1N60A | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup | KERSEMI | | |
SiHFR1N60A | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup | LUCKY-LIGHT | | |
SIHFR1N60A | Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPL | VishayVishay Siliconix 威世威世科技公司 | | |
SIHFR1N60A | N-Channel 650 V (D-S) MOSFET 文件：1.08652 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
SiHFR1N60A | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
SIHFR1N60A | iscN-Channel MOSFET Transistor 文件：333.46 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08659 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08672 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.0869 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
GOLD BONDED GERMANIUM DIODE Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di | Littelfuse 力特 | | ||
Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar | FORMOSA 美丽微半导体 | | ||
JEDEC DO-7 PACKAGE JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | |
SIHFR1N60A产品属性
- 类型
描述
- 型号
SIHFR1N60A
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
Vishay |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
20+ |
TO-252 |
7500 |
现货很近!原厂很远!只做原装 |
|||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VIS |
23+ |
DPAK |
10000 |
原装正品,假一罚十 |
|||
VISHAY/威世 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY(威世) |
2447 |
TO-252-3 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
Vishay |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY/威世 |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
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SIHFR1N60A规格书下载地址
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2019-12-7
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