SIHFR014价格

参考价格:¥1.9548

型号:SIHFR014TR-GE3 品牌:VIS 备注:这里有SIHFR014多少钱,2026年最近7天走势,今日出价,今日竞价,SIHFR014批发/采购报价,SIHFR014行情走势销售排行榜,SIHFR014报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SIHFR014

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

SIHFR014

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

SIHFR014

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR014, SiHFR014) • Straight lead (IRFU014, SiHFU014) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

VISHAYVishay Siliconix

威世威世科技公司

SiHFR014

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

SIHFR014

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

SIHFR014

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

文件:892.51 Kbytes Page:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:892.51 Kbytes Page:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:892.51 Kbytes Page:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.92902 Mbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:892.51 Kbytes Page:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FAIRCHILD

仙童半导体

MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY

DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified

STMICROELECTRONICS

意法半导体

MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY

DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. FEATURES: • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold™ Metalization System • Emitter Ballasting

ASI

Adaptive Cable Equalizer for High-Speed Data Recovery

文件:521.28 Kbytes Page:18 Pages

NSC

国半

SIHFR014产品属性

  • 类型

    描述

  • 型号

    SIHFR014

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2026-3-16 11:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
TO-252
18832
原装正品现货库存假一赔十欢迎询价
VISHAY/威世
2511
TO-252
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
VISHAY/威世
23+
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VBsemi/台湾微碧
23+
TO/252
12800
公司只有原装 欢迎来电咨询。
VISHAY/威世
23+
TO252
50000
全新原装正品现货,支持订货
Vishay
25+
TO-252
10000
原装现货假一罚十
VISHAY/威世
2022+
SOT252
29880
原厂代理 终端免费提供样品
NK/南科功率
2025+
TO-252-2
986966
国产
VBsemi/台湾微碧
22+
TO/252
20000
公司只做原装 品质保证
Vishay
25+
DPAK(TO-252)
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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