位置：首页 > IC中文资料第6183页 > SIHFP26N60L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFP26N60L | Power MOSFET Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity | VishayVishay Siliconix 威世威世科技公司 |   | |
SIHFP26N60L | iscN-Channel MOSFET Transistor 文件：444.99 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SIHFP26N60L | Power MOSFET 文件：226.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
SIHFP26N60L | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：226.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza | VishayVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.25Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
SMPS MOSFET Features and Benefits • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Applica | IRF | | ||
Power MOSFET Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：226.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | |
SIHFP26N60L产品属性
- 类型
描述
- 型号
SIHFP26N60L
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-247-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Vishay |
25+ |
TO-247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY/威世 |
2022+ |
TO-247 |
50000 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
1805+ |
TO-247-3 |
15 |
原装正品现货,可开发票,假一赔十 |
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2019-12-7
DdatasheetPDF页码索引
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