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IRFP26N60L价格
参考价格：￥22.0084
型号：IRFP26N60LPBF 品牌：Vishay 备注：这里有IRFP26N60L多少钱，2025年最近7天走势，今日出价，今日竞价，IRFP26N60L批发/采购报价，IRFP26N60L行情走势销售排行榜，IRFP26N60L报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP26N60L | SMPSMOSFET FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Applica | IRF International Rectifier |  |   |
IRFP26N60L | PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
IRFP26N60L | iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.25Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFP26N60L | PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFP26N60L | PowerMOSFET 文件：226.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
HEXFETPowerMOSFET(VDSS=600V,RDS(on)typ.=210m廓,Trrtyp.=170ns,ID=26A) FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead- | IRF International Rectifier | | | |
PowerMOSFET 文件：226.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFP26N60L产品属性
- 类型
描述
- 型号
IRFP26N60L
- 功能描述
MOSFET N-Chan 600V 26 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+/25+ |
TO-247AC |
2850 |
原装正品现货库存价优 |
|||
IR |
23+ |
TO-247 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
VISHAY |
TO247 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
24+ |
TO-247AC |
45000 |
绝对全新原装公司长期有货 |
|||
VISHAY/威世 |
2022+ |
TO-247 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IR |
23+ |
TO-247 |
28000 |
原装正品 |
|||
IR |
23+ |
TO-247 |
9896 |
||||
VISHAY |
13+ |
TO-247 |
74 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
18000 |
25+23+ |
TO-247AC |
30486 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
2021 |
TO-247 |
5000 |
全新原装公司现货
|
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瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-26
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