Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

文件：1.57958 Mbytes Page：9 Pages

Power MOSFET

文件：1.58435 Mbytes Page：9 Pages

iscN-Channel MOSFET Transistor

文件：444.81 Kbytes Page：2 Pages

Power MOSFET

文件：1.61131 Mbytes Page：11 Pages

Power MOSFET

文件：1.57958 Mbytes Page：9 Pages

Power MOSFET

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

文件：1.29533 Mbytes Page：11 Pages

Power MOSFET

文件：1.61131 Mbytes Page：11 Pages

Power MOSFET

文件：1.57958 Mbytes Page：9 Pages

iscN-Channel MOSFET Transistor

文件：444.82 Kbytes Page：2 Pages

Power MOSFET

文件：1.91641 Mbytes Page：9 Pages

Power MOSFET

Power MOSFET

文件：1.91641 Mbytes Page：9 Pages

Power MOSFET

文件：1.91641 Mbytes Page：9 Pages

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Isolated Central Mounting Hole ● 175°C Operating Temperature ● Ease

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

On-Screen-Display Controller for CRT/LCD Monitor

[MYSON TECHNOLOGY] GENERAL DESCRIPTION MTV048 is designed for monitor applications to display built-in fonts onto monitor screens. The display operation occurs by transferring data and controls information from the micro controller to RAM through a serial data interface. It can execute a ful

Three Phase Half Controlled Rectifier Bridge, B6HK

文件：43.96 Kbytes Page：2 Pages

The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.

文件：526.86 Kbytes Page：48 Pages