Power MOSFET

文件：825.31 Kbytes Page：9 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

1.2A High Efficiency Buck-Boost Regulators

• Accepts input voltages above or below regulated output voltage • Automatic and seamless transitions between Buck and Boost modes • Input voltage range: 1.8V to 5.5V • Output current: Up to 1.2A • High efficiency: Up to 95% • 35μA quiescent current maximizes light-load efficiency • 2.

Single/Dual LVDS Line Drivers with Ultra-Low Pulse Skew in SOT23

文件：1.50267 Mbytes Page：9 Pages