Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

High-Voltage Switchmode Controllers

FEATURES 10- to 120-V Input Range Current-Mode Control High-Speed, Source-Sink Output Drive High Efficiency Operation (> 80) Internal Start-Up Circuit Internal Oscillator (1 MHz) SHUTDOWN and RESET Reference Selection Si9110 − 1 Si9111 − 10 DESCRIPTION The Si9110/9111 are BiC/DMOS inte

Single/Dual LVDS Line Drivers with Ultra-Low Pulse Skew in SOT23

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