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SI69价格
参考价格:¥3.0796
型号:SI6913DQ-T1-E3 品牌:Vishay 备注:这里有SI69多少钱,2025年最近7天走势,今日出价,今日竞价,SI69批发/采购报价,SI69行情走势销售排行榜,SI69报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual P-Channel 12-V (D-S) MOSFET FEATURES • TrenchFET Power MOSFETS APPLICATIONS • Load Switch • Battery Switch | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 12-V (D-S) MOSFET FEATURES • TrenchFET Power MOSFETS APPLICATIONS • Load Switch • Battery Switch | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 12 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFETs • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch • Battery Switch Ordering Information: Si6913DQ-T1-E3 (Lead (Pb)-free) Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 12 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFETs • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch • Battery Switch Ordering Information: Si6913DQ-T1-E3 (Lead (Pb)-free) Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) | VishayVishay Siliconix 威世威世科技公司 | |||
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter | Fairchild 仙童半导体 | |||
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter | Fairchild 仙童半导体 | |||
N-Channel 2.5-V (G-S) Battery Switch, ESD Protection FEATURES • Halogen-free • Low RDS(on) • VGS Max Rating: 14 V • Exceeds 2 kV ESD Protection • 28 V VDS Rated • Symmetrical Voltage Blocking (Off Voltage) DESCRIPTION The Si6924AEDQ is a dual N-Channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated int | VishayVishay Siliconix 威世威世科技公司 | |||
N-Channel 2.5-V (G-S) Battery Switch, ESD Protection FEATURES • Halogen-free • Low RDS(on) • VGS Max Rating: 14 V • Exceeds 2 kV ESD Protection • 28 V VDS Rated • Symmetrical Voltage Blocking (Off Voltage) DESCRIPTION The Si6924AEDQ is a dual N-Channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated int | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.02 | Fairchild 仙童半导体 | |||
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free Option Available | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free Option Available | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel Enhancement-Mode MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V –20V). Features • –3.5 A, –30 V, RDS(ON) = 45 mΩ | Fairchild 仙童半导体 | |||
Dual P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (–2.5V to –8V). Features • –2.5 A, –12 V, RDS(ON) = 110 | Fairchild 仙童半导体 | |||
Dual P-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (–2.5V to –8V). Features • –2.5 A, –12 V, RDS(ON) = 110 | Fairchild 仙童半导体 | |||
Dual 20V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –1.9 A, –20 V, RDS(ON) = 170 mΩ @ | Fairchild 仙童半导体 | |||
N-Channel 2.5-V (G-S) Battery Switch FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 2.5 V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
N-Channel 2.5-V (G-S) Battery Switch FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 2.5 V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –2.5 A, –30 V, RDS(ON) = 85 mΩ @ V | Fairchild 仙童半导体 | |||
Dual P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –2.5 A, –30 V, RDS(ON) = 85 mΩ @ V | Fairchild 仙童半导体 | |||
Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –3.8 A, –20 V, RDS(ON) = 0.043 Ω | Fairchild 仙童半导体 | |||
Dual P-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –3.8 A, –20 V, RDS(ON) = 0.043 Ω | Fairchild 仙童半导体 | |||
Dual P-Channel 2.5-V (G-S) MOSFET Dual P-Channel 2.5-V (G-S) MOSFET TrenchFET Power MOSFETs 2.5-V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 2.5-V (G-S) MOSFET Dual P-Channel 2.5-V (G-S) MOSFET TrenchFET Power MOSFETs 2.5-V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @ | Fairchild 仙童半导体 | |||
Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @ | Fairchild 仙童半导体 | |||
Dual N-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs: 2.5 V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs: 2.5 V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected FEATURES • Halogen-free • ESD Protected: 4000 V | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected FEATURES • Halogen-free • ESD Protected: 4000 V | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection FEATURES • TrenchFET® power MOSFETs • ESD protected: 3000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note • *(Pb)-containing terminations are not RoHS-compliant. Exemptions may apply | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection FEATURES • TrenchFET® power MOSFETs • ESD protected: 3000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note • *(Pb)-containing terminations are not RoHS-compliant. Exemptions may apply | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection FEATURES • TrenchFET® power MOSFETs • ESD protected: 3000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note • *(Pb)-containing terminations are not RoHS-compliant. Exemptions may apply | VishayVishay Siliconix 威世威世科技公司 | |||
Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection FEATURES • TrenchFET® power MOSFETs • ESD protected: 3000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note • *(Pb)-containing terminations are not RoHS-compliant. Exemptions may apply | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated Ordering Information: Si6969DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated Ordering Information: Si6969DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch Ordering Information: Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch Ordering Information: Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • Battery Switch | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • Battery Switch | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch | VishayVishay Siliconix 威世威世科技公司 | |||
Bi-Directional P-Channel 12-V (D-S) MOSFET 文件:193.46 Kbytes Page:3 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual P-Channel 12-V (D-S) MOSFET | VishayVishay Siliconix 威世威世科技公司 |
SI69产品属性
- 类型
描述
- 型号
SI69
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Bi-Directional P-Channel 12-V(D-S) MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Vishay(威世) |
24+ |
8TSSOP(0.173,4.40mm 宽) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
台产 |
23+ |
MSOP-8 |
6200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
VISHAY |
ROHS |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VISHAY/威世 |
22+ |
SOP-8 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAY |
24+ |
TSSOP8 |
38520 |
一级代理/放心购买 |
|||
VISHAY/威世 |
25+ |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
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SI69数据表相关新闻
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