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SI69价格

参考价格:¥3.0796

型号:SI6913DQ-T1-E3 品牌:Vishay 备注:这里有SI69多少钱,2026年最近7天走势,今日出价,今日竞价,SI69批发/采购报价,SI69行情走势销售排行榜,SI69报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Dual P-Channel 12-V (D-S) MOSFET

FEATURES • TrenchFET Power MOSFETS APPLICATIONS • Load Switch • Battery Switch

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 12-V (D-S) MOSFET

FEATURES • TrenchFET Power MOSFETS APPLICATIONS • Load Switch • Battery Switch

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 12 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETs • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch • Battery Switch Ordering Information: Si6913DQ-T1-E3 (Lead (Pb)-free) Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 12 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETs • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch • Battery Switch Ordering Information: Si6913DQ-T1-E3 (Lead (Pb)-free) Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter

FAIRCHILD

仙童半导体

P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter

FAIRCHILD

仙童半导体

N-Channel 2.5-V (G-S) Battery Switch, ESD Protection

FEATURES • Halogen-free • Low RDS(on) • VGS Max Rating: 14 V • Exceeds 2 kV ESD Protection • 28 V VDS Rated • Symmetrical Voltage Blocking (Off Voltage) DESCRIPTION The Si6924AEDQ is a dual N-Channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated int

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 2.5-V (G-S) Battery Switch, ESD Protection

FEATURES • Halogen-free • Low RDS(on) • VGS Max Rating: 14 V • Exceeds 2 kV ESD Protection • 28 V VDS Rated • Symmetrical Voltage Blocking (Off Voltage) DESCRIPTION The Si6924AEDQ is a dual N-Channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated int

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5-V (G-S) MOSFET, Common Drain, ESD Protected

The Si6924EDQ is a dual n-channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated into the MOSFET. The device is designed for use in Lithium Ion battery pack circuits. The common-drain contsruction takes advantage of the typical battery pack topology, allowing a fu

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.02

FAIRCHILD

仙童半导体

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free Option Available

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free Option Available

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs

VISHAYVishay Siliconix

威世威世科技公司

Dual 30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V –20V). Features • –3.5 A, –30 V, RDS(ON) = 45 mΩ

FAIRCHILD

仙童半导体

Dual P-Channel Enhancement-Mode MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs    

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (–2.5V to –8V). Features • –2.5 A, –12 V, RDS(ON) = 110

FAIRCHILD

仙童半导体

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (–2.5V to –8V). Features • –2.5 A, –12 V, RDS(ON) = 110

FAIRCHILD

仙童半导体

Dual 20V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –1.9 A, –20 V, RDS(ON) = 170 mΩ @

FAIRCHILD

仙童半导体

N-Channel 2.5-V (G-S) Battery Switch

FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 2.5 V Rated

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 2.5-V (G-S) Battery Switch

FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 2.5 V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual 30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –2.5 A, –30 V, RDS(ON) = 85 mΩ @ V

FAIRCHILD

仙童半导体

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs

VISHAYVishay Siliconix

威世威世科技公司

Dual 30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –2.5 A, –30 V, RDS(ON) = 85 mΩ @ V

FAIRCHILD

仙童半导体

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –3.8 A, –20 V, RDS(ON) = 0.043 Ω

FAIRCHILD

仙童半导体

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET TrenchFET Power MOSFETs 2.5-V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –3.8 A, –20 V, RDS(ON) = 0.043 Ω

FAIRCHILD

仙童半导体

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET TrenchFET Power MOSFETs 2.5-V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @

FAIRCHILD

仙童半导体

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @

FAIRCHILD

仙童半导体

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs: 2.5 V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs: 2.5 V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected

FEATURES • Halogen-free • ESD Protected: 4000 V

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected

FEATURES • Halogen-free • ESD Protected: 4000 V

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection

FEATURES • TrenchFET® power MOSFETs • ESD protected: 3000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note • *(Pb)-containing terminations are not RoHS-compliant. Exemptions may apply

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection

FEATURES • TrenchFET® power MOSFETs • ESD protected: 3000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note • *(Pb)-containing terminations are not RoHS-compliant. Exemptions may apply

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection

FEATURES • TrenchFET® power MOSFETs • ESD protected: 3000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note • *(Pb)-containing terminations are not RoHS-compliant. Exemptions may apply

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection

FEATURES • TrenchFET® power MOSFETs • ESD protected: 3000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note • *(Pb)-containing terminations are not RoHS-compliant. Exemptions may apply

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated Ordering Information: Si6969DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated Ordering Information: Si6969DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch Ordering Information: Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch Ordering Information: Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • Battery Switch

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • Battery Switch

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • Battery Switch

VISHAYVishay Siliconix

威世威世科技公司

Bi-Directional P-Channel 12-V (D-S) MOSFET

文件:193.46 Kbytes Page:3 Pages

VISHAYVishay Siliconix

威世威世科技公司

SI69产品属性

  • 类型

    描述

  • 型号

    SI69

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Bi-Directional P-Channel 12-V(D-S) MOSFET

更新时间:2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TSSOP-8
20948
样件支持,可原厂排单订货!
onsemi(安森美)
25+
TSSOP-8
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
SILICONIX
23+
NA
20000
全新原装假一赔十
SILICONIX
24+
TSSOP8
9862
全新原装现货/假一罚百!
Vishay Siliconix
22+
8TSSOP
9000
原厂渠道,现货配单
VISHAY/威世
2450+
TSSOP-8
9850
只做原厂原装正品现货或订货假一赔十!
FSC/ON
26+
原包装原封 □□
8528
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
SILICONIX
2223+
TSSOP-8
26800
只做原装正品假一赔十为客户做到零风险
SILICONIX
26+
MSOP
6868
原装现货,可开13%税票
VISHAY
20+
SOP-8
2960
诚信交易大量库存现货

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