P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter

P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter

P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode

ANX6923资料

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Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz

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