General Description

This P-Channel MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

Features

• –2.5 A, –30 V, RDS(ON) = 85 mΩ @ VGS = –10 V. RDS(ON) = 190 mΩ @ VGS = –4.5V.

• Extended VGSS range (±20V) for battery applications

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• Load switch

• Battery protection

• DC/DC conversion

• Power management