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SI4922B价格
参考价格：￥3.2790
型号：SI4922BDY-T1-E3 品牌：Vishay 备注：这里有SI4922B多少钱，2025年最近7天走势，今日出价，今日竞价，SI4922B批发/采购报价，SI4922B行情走势销售排行榜，SI4922B报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS tested • Compliant to RoHS Directive 2002/95/EC Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free) Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) | VishayVishay Siliconix 威世威世科技公司 |   | ||
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS tested • Compliant to RoHS Directive 2002/95/EC Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free) Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：186.64 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30 V (D-S) MOSFET 文件：1.05192 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：254.58 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel Enhancement Mode Field Effect Transistor Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices | ACE | | ||
Surface Mount High Current Power Inductors 文件：1.13856 Mbytes Page：1 Pages | API | | ||
Dual N-Channel Enhancement Mode MOSFET 文件：644.51 Kbytes Page：7 Pages | ACE | | ||
Dual N-Channel Enhancement Mode Field Effect Transistor 文件：837.78 Kbytes Page：6 Pages | ACE | | ||
Dual N-Channel MOSFET uses advanced trench technology 文件：2.53215 Mbytes Page：4 Pages | DOINGTER 杜因特 | |
SI4922B产品属性
- 类型
描述
- 型号
SI4922B
- 功能描述
MOSFET DUAL N-CH 30V(D-S)
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
SOP8 |
32360 |
VISHAY/威世全新特价SI4922BDY-T1-GE3即刻询购立享优惠#长期有货 |
|||
VISHAY |
19+ |
BGA |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
24+ |
SOP-8 |
990000 |
明嘉莱只做原装正品现货 |
|||
Vishay Siliconix |
22+ |
8SO |
9000 |
原厂渠道,现货配单 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
VISHAY/威世 |
2517+ |
SOP-8 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
新年份 |
SOP-8 |
33288 |
原装正品现货,实单带TP来谈! |
|||
Vishay(威世) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
SILICONIXVISHAY |
21+ |
NA |
2500 |
百域芯优势 实单必成 可开13点增值税 |
SI4922B规格书下载地址
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DdatasheetPDF页码索引
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