Description

The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.

APPLICATIONS

• Low On-Resistance

• Fast Switching Speed

• Low-voltage drive

• Easily designed drive circuits

• Pb-Free Package is available. The suffix G means Pb-free package

• ESD Protected： 2000V