Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode MOSFET

Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices

Dual N-Channel Enhancement Mode Field Effect Transistor

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MOSFET

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

VERY LOW DROP REGULATOR WITH RESET

DESCRIPTION The L4922is a high current monolithic voltage regulator with very low voltage drop (0.70 V max at 1 A, TJ = 25 °C). The device is internally protected against load dumps transient of + 60V, reverse polarity, over heating and output short circuit : thanks toted for the automotive and

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

SPICE Device Model Si4922DY

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