TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 100 Volts

FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

Hermetic Optoschmitts

[HONEYWELL INC.]

SD5600-001 - 红外接收器, Optoschmitt, 12 °, 16 V, 4.5 V, -40 °C

The SD5600-001 is a single-chip Optoschmitt IC Detector mounted in a TO-46 metal can package. The photodetector consists of a photodiode, amplifier, voltage regulator, Schmitt trigger and an NPN output transistor with 10kR (nominal) pull-up resistor. Output rise and fall times are independent of the ·6° (nominal) acceptance angle\n·High noise immunity output\n·TTL/LSTTL/CMOS compatible\n·Buffer (SD5600) or inverting (SD5610) logic available\n·Mechanically & spectrally matched to SE3450/5450, SE3455/5455 & SE3470/5470 infrared emitting diodes;

Hermetic Optoschmitts

[HONEYWELL INC.]

60 W，28 V，HF至1 GHz RF功率LDMOS晶体管

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. • Excellent thermal stability \n• Common source configuration push-pull \n• BeO-free package;

60 W, 28 V, HF to 1 GHz RF power LDMOS transistor

Features • Excellent thermal stability • Common source configuration push-pull • BeO-free package Description The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up

SD560B STANDARD RECTIFIER

Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Low Power Loss Built Strain Relief Plastic Case Material has UL Flammability Classification Rating 94V-O This is a Halogen Free Device All SMC parts are traceable to the wafer lot Ad

SD560BP STANDARD RECTIFIER

Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Low Power Loss Built Strain Relief Plastic Case Material has UL Flammability Classification Rating 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Addit

SD560C STANDARD RECTIFIER

Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Low Power Loss Built-in Strain Relief Plastic Case Material has UL Flammability Classification Rating 94V-0 This is a Pb − Free Device All SMC parts are traceable to the wafer lot Ad

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

5.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applicati

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

5.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier chip ● Guard Ring Die Construction ● Low Profile Package ● High Surge Current Capability ● Low Power Loss, High Efficiency ● Ideal for Printed Circuit Board ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling Applications

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capac

Hermetic Optoschmitts

[HONEYWELL INC.]

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS RF POWER TRANSISTORS

Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode

Excellent thermal stability

Description The SD56120C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120C is designed for high gain and broadband performance operating in common source m

RF POWER TRANSISTORS The LdmoST FAMILY

DESCRIPTION The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source m

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

Hermetic Optoschmitts

[HONEYWELL INC.]

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoST FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

Hermetic Optoschmitts

[HONEYWELL INC.]

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

Hermetic Optoschmitts

[HONEYWELL INC.]

Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages

Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages

封装/外壳：M246 包装：托盘 描述：RF POWER TRANSISTOR, THE LDMOSST 分立半导体产品 晶体管 - FET，MOSFET - 射频

线性稳压器(LDO)

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 600V 5A SMB 分立半导体产品 二极管 - 整流器 - 单

STANDARD RECTIFIER

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Glass Passivated Die Construction

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Glass Passivated Die Construction

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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5A/60V Low VF Schottky Rectifier

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages

Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：311.38 Kbytes Page：15 Pages

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：311.38 Kbytes Page：15 Pages

Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages

Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages

Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages

Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages