60 W, 28 V, HF to 1 GHz RF power LDMOS transistor

Features • Excellent thermal stability • Common source configuration push-pull • BeO-free package Description The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up

60 W，28 V，HF至1 GHz RF功率LDMOS晶体管

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. • Excellent thermal stability \n• Common source configuration push-pull \n• BeO-free package;

封装/外壳：M246 包装：托盘 描述：RF POWER TRANSISTOR, THE LDMOSST 分立半导体产品 晶体管 - FET，MOSFET - 射频

TRIAC, 16A

Description: The NTE56058 through NTE56060 are glass passivated TRIACs in an isolated full–pack type package designed for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, in

NTE56058 thru NTE56060 TRIAC, 16A

Description: The NTE56058 through NTE56060 are glass passivated TRIACs in an isolated full–pack type package designed for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, in

4-Channel Speech Controller

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