RF POWER TRANSISTORS RF POWER TRANSISTORS

Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

120W 28V HF to 1GHz LDMOS TRANSISTOR in push-pull package

• Excellent thermal stability\n• POUT = 100W with 14dB gain @ 860MHz• Common source configuration Push-pull\n• BeO free package;

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：311.38 Kbytes Page：15 Pages

封装/外壳：M246 包装：卷带（TR） 描述：FET RF 65V 860MHZ M246 分立半导体产品 晶体管 - FET，MOSFET - 射频

Excellent thermal stability

Description The SD56120C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120C is designed for high gain and broadband performance operating in common source m

RF POWER TRANSISTORS The LdmoST FAMILY

DESCRIPTION The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source m

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：311.38 Kbytes Page：15 Pages

封装/外壳：M252 包装：卷带（TR） 描述：FET RF 65V 860MHZ M252 分立半导体产品 晶体管 - FET，MOSFET - 射频

4-Channel Speech Controller

文件：378.78 Kbytes Page：11 Pages

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：311.38 Kbytes Page：15 Pages