TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 100 Volts

FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

DMOS High Speed Switches

LIS has acquired the Siliconix Lateral DMOS FET Switch Product Line Same Maskset / Same Process / Exact Pin for Pin Replacements All single devices are available in TO-72 SOT-143 Tested DieAll Quad Devices are available in PDIP Sidebraze SOIC-14 SOIC-16Tested Die All Devices are available with speci

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

5.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applicati

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

5.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier chip ● Guard Ring Die Construction ● Low Profile Package ● High Surge Current Capability ● Low Power Loss, High Efficiency ● Ideal for Printed Circuit Board ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling Applications

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capac

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

DMOS Switches

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

DMOS Switches

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：42.02 Kbytes Page：2 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：119.57 Kbytes Page：3 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SURFACE MOUNT SCHOTTKY BARRIER R 分立半导体产品 二极管 - 整流器 - 单

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：41.06 Kbytes Page：2 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：42.58 Kbytes Page：2 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：118.85 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：41.3 Kbytes Page：2 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SURFACE MOUNT SCHOTTKY BARRIER R 分立半导体产品 二极管 - 整流器 - 单

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：41.69 Kbytes Page：2 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：425.64 Kbytes Page：2 Pages

丝印代码：-MG；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI