High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

DMOS High Speed Switches

LIS has acquired the Siliconix Lateral DMOS FET Switch Product Line Same Maskset / Same Process / Exact Pin for Pin Replacements All single devices are available in TO-72 SOT-143 Tested DieAll Quad Devices are available in PDIP Sidebraze SOIC-14 SOIC-16Tested Die All Devices are available with speci

High-Speed DMOS Quad FET Analog Switch Arrays

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Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

DMOS Switches

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

丝印代码：-2L；PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBT5550. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT323 plastic package. NPN complements: PMST5550 and PMST5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose • Telephony.

丝印代码：P33；SMALL SIGNAL PNP TRANSISTORS

■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE

High Efficiency LED in 5 mm Tinted Diffused Package

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