High-Speed Analog N-Channel DMOS FETs

DESCRIPTION The Calogic SD210 is a 30V analog switch driver without a built-in protection diode from gate to substrate for use with SD212 and SD214 DMOS analog switches. FEATURES • High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB • Low On Resistance . . . . . . . . . . .

High-Speed Analog N-Channel DMOS FETs

DESCRIPTION\nThe Calogic SD210 is a 30V analog switch driver without a built-in protection diode from gate to substrate for use with SD212 and SD214 DMOS analog switches.\nFEATURES\n• High Input to Output Isolation . . . . . . . . . . . . . . . .  120dB\n• Low On Resistance . . . . . . . . . . . . . • High Input to Output Isolation . . . . . . . . . . . . . . . .  120dB\n• Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm\n• Low Feedthrough and Feedback Transients\n• Low Capacitance:\n   –Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . .  2.4pF typ.\n   –O;

Schottky Diode

分立

DMOS High Speed Switches

High-Speed Analog N-Channel DMOS FETs

文件：149.77 Kbytes Page：2 Pages

N-Channel Depletion Mode Lateral DMOS FET

DESCRIPTION The SD2100/SST2100 is a depletion mode DMOS lateral FET that provides ultra high speed switching with very low capacitance. The product is available in TO-72 and surface mount SOT-143. FEATURES •Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . tON 1.0ns •

HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

High-Speed Analog N-Channel DMOS FETs

DESCRIPTION The Calogic SD210 is a 30V analog switch driver without a built-in protection diode from gate to substrate for use with SD212 and SD214 DMOS analog switches. FEATURES • High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB • Low On Resistance . . . . . . . . . . .

包装：盒 描述：SENSOR PROX INDUCTIVE IP20 BOX 传感器，变送器 放大器

包装：盒 描述：SENSOR RLY 220VAC DPDT NAMUR 传感器，变送器 放大器

N-Channel Enhancement Mode DMOS Lateral Switches

文件：240.4 Kbytes Page：1 Pages

N-Channel Enhancement Mode DMOS Lateral Switches

文件：261.41 Kbytes Page：1 Pages

N-CHANNEL LATERAL DMOS SWITCH

文件：476.52 Kbytes Page：2 Pages

N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

文件：163.55 Kbytes Page：2 Pages

N-CHANNEL LATERAL DMOS SWITCH

文件：512.679 Kbytes Page：2 Pages

High-Speed Analog N-Channel DMOS FETs

文件：36.61 Kbytes Page：2 Pages

N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

文件：163.55 Kbytes Page：2 Pages

High-Speed Analog N-Channel DMOS FETs

文件：93.85 Kbytes Page：2 Pages

High-Speed Analog N-Channel DMOS FETs

文件：149.77 Kbytes Page：2 Pages

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

POWER RECTIFIERS(2.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

POWER RECTIFIERS(2.0A,500-1000V)

Voltage Follower

文件：348.91 Kbytes Page：16 Pages