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MJE210晶体管资料

  • MJE210别名：MJE210三极管、MJE210晶体管、MJE210晶体三极管

  • MJE210生产厂家：美国摩托罗拉半导体公司

  • MJE210制作材料：Si-PNP

  • MJE210性质：低频或音频放大 （LF）_功率放大 （L）

  • MJE210封装形式：直插封装

  • MJE210极限工作电压：25V

  • MJE210最大电流允许值：5A

  • MJE210最大工作频率：<1MHZ或未知

  • MJE210引脚数：3

  • MJE210最大耗散功率：15W

  • MJE210放大倍数：

  • MJE210图片代号：B-21

  • MJE210vtest：25

  • MJE210htest：999900

  • MJE210atest：5

  • MJE210wtest：15

  • MJE210代换 MJE210用什么型号代替：BD186,BD196,BD206,

MJE210价格

参考价格：￥0.9894

型号：MJE210G 品牌：ON 备注：这里有MJE210多少钱，2024年最近7天走势，今日出价，今日竞价，MJE210批发/采购报价，MJE210行情走势销售排行榜，MJE210报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE210

5AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON25VOLTS15WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJE210

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE210

SILICONPNPTRANSISTOR

DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNPtransistorinJedecSOT-32plasticpackage,designedforlowvoltage,lowpower,highgainaudioamplifierapplications. ■STMicroelectronicsPREFERREDSALESTYPE ■PNPTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJE210

PNP(COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTER)

COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTER SATURATIONVOLTAGE HIGHCURRENTGAIN-BANDWIDTH PRODUCT-MINfT=65MHz@Ic=-100mA ComplementarytoMJE200

SamsungSamsung Group

三星三星半导体

Samsung
MJE210

Feature

Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=-100mA(Min.) •ComplementtoMJE200

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJE210

SILICONPNPTRANSISTOR

■STMicroelectronicsPREFERRED SALESTYPE ■PNPTRANSISTOR DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNP transistorinJedecSOT-32plasticpackage, designedforlowvoltage,lowpower,highgain audioamplifierapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJE210

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
MJE210

SiliconPNPtransistorinaTO-126FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE200. Applications Designedforgeneralaudioamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MJE210

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 40V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE210

封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 25V 5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJE210

ComplementarySiliconPowerPlasticTransistors

文件：120.99 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE210_03

SILICONPNPTRANSISTOR

■STMicroelectronicsPREFERRED SALESTYPE ■PNPTRANSISTOR DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNP transistorinJedecSOT-32plasticpackage, designedforlowvoltage,lowpower,highgain audioamplifierapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJE2100

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE2100

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE2101

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE2101

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE2102

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE2103

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE2103

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE210G

ComplementarySiliconPowerPlasticTransistors

Thesedevicesaredesignedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •HighDCCurrentGain •LowCollector−EmitterSaturationVoltage •HighCurrent−Gain−BandwidthProduct •AnnularConstructionforLowLeakage •TheseDevicesarePb−FreeandareRoHSCo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE210TG

ComplementarySiliconPowerPlasticTransistors

Thesedevicesaredesignedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •HighDCCurrentGain •LowCollector−EmitterSaturationVoltage •HighCurrent−Gain−BandwidthProduct •AnnularConstructionforLowLeakage •TheseDevicesarePb−FreeandareRoHSCo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE210G

ComplementarySiliconPowerPlasticTransistors

文件：120.99 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE210STU

FAIRCHILDSmallSignalTransistors

文件：628.43 Kbytes Page：1 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJE210T

ComplementarySiliconPowerPlasticTransistors

文件：120.99 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE210TG

ComplementarySiliconPowerPlasticTransistors

文件：120.99 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
210

Thru-BoltsandMountingBrackets

文件：286.71 Kbytes Page：3 Pages

OHMITE

OHMITE MANUFACTURING COMPANY

OHMITE
210

M8Female3PinFieldAttachable

文件：178.33 Kbytes Page：2 Pages

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE
210

DirectreplacementforT3쩌MidgetEdisonScrewE10

文件：290.6 Kbytes Page：5 Pages

MARL

Marl International Ltd

MARL
210

AUTO-DIP짰SwitchAutomaticallyInsertable,WaveSolderable,BoardWashableDIPSwitch

文件：602.94 Kbytes Page：2 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS
210GR

M8Female3PinFieldAttachable

文件：178.33 Kbytes Page：2 Pages

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

MJE210产品属性

  • 类型

    描述

  • 型号

    MJE210

  • 功能描述

    两极晶体管 - BJT PNP Audio Amplifier

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJE210供应商更多...

更新时间：2024-4-20 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市东来宝电子科技有限公司
MJE210G
ON/安森美
22+
TO-225
60620
3200
询价
深圳市明嘉莱科技有限公司
MJE210G
ON/安森美
24+
SMD
860000
明嘉莱只做原装正品现货
询价
深圳好佳好科技有限公司
MJE210G
ON
1305+
TO-225
12000
公司特价原装现货
询价
深圳市弘为电子有限公司
MJE210
MOTOROLA
16+
11999
原装现货假一罚十
询价
深圳市维尔达电子有限公司
MJE210G
ON
2023+
TO225
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市百域芯科技有限公司
MJE210G
ONSEMI
21+
TO-225
6982
百域芯优势 实单必成 可开13点增值税
询价
深圳市晴轩时代电子有限公司
MJE210G
ON/安森美
21+
TO-225
8800
公司只做原装正品
询价
深圳市芯智源科技有限公司
MJE210TG
ON/安森美
21+
NA
12820
公司只有原装
询价
深圳市思乐华科技有限公司
MJE210TG
ON/安森美
22+
NA
8000
只做原装正品 支持实单
询价
深圳市羿芯诚电子有限公司
MJE210G
ON/安森美
23+
TSSOP
10000
原装进口只做订货 寻找优势渠道合作
询价

MJE210芯片相关品牌

  • Altera
  • BILIN
  • Cree
  • ETC
  • HY
  • LUMILEDS
  • MOLEX2
  • OHMITE
  • RCD
  • spansion
  • TOKEN
  • VBSEMI

MJE210规格书下载地址

MJE210参数引脚图相关

MJE210数据表相关新闻

DdatasheetPDF页码索引

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