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MJE210晶体管资料
MJE210别名：MJE210三极管、MJE210晶体管、MJE210晶体三极管
MJE210生产厂家：美国摩托罗拉半导体公司
MJE210制作材料：Si-PNP
MJE210性质：低频或音频放大 （LF）_功率放大 （L）
MJE210封装形式：直插封装
MJE210极限工作电压：25V
MJE210最大电流允许值：5A
MJE210最大工作频率：<1MHZ或未知
MJE210引脚数：3
MJE210最大耗散功率：15W
MJE210放大倍数：
MJE210图片代号：B-21
MJE210vtest：25
MJE210htest：999900
- MJE210atest：5
MJE210wtest：15
MJE210代换 MJE210用什么型号代替：BD186,BD196,BD206,
MJE210价格
参考价格：￥0.9894
型号：MJE210G 品牌：ON 备注：这里有MJE210多少钱，2025年最近7天走势，今日出价，今日竞价，MJE210批发/采购报价，MJE210行情走势销售排行榜，MJE210报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE210 | 5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High | Motorola 摩托罗拉 |   | |
MJE210 | POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. Features • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc | ONSEMI 安森美半导体 | | |
MJE210 | SILICON PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR | STMICROELECTRONICS 意法半导体 | | |
MJE210 | PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER) COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ Ic=-100mA Complementary to MJE200 | Samsung 三星 | | |
MJE210 | Feature Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) • Complement to MJE200 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MJE210 | SILICON PNP TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. | STMICROELECTRONICS 意法半导体 | | |
MJE210 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. | Central | | |
MJE210 | Silicon PNP transistor in a TO-126F Plastic Package. Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Low collector-emitter saturation voltage, high current gain bandwidth product, Complement to MJE200. Applications Designed for general audio amplifier applications. | FOSHAN 蓝箭电子 | | |
MJE210 | 封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 40V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJE210 | 封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 25V 5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
MJE210 | Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
SILICON PNP TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. | STMICROELECTRONICS 意法半导体 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
FAIRCHILD Small Signal Transistors 文件：628.43 Kbytes Page：1 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Thru-Bolts and Mounting Brackets 文件：286.71 Kbytes Page：3 Pages | OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司 | | ||
M8 Female 3 Pin Field Attachable 文件：178.33 Kbytes Page：2 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | | ||
Direct replacement for T3 쩌 Midget Edison Screw E10 文件：290.6 Kbytes Page：5 Pages | MARL Marl International Ltd | | ||
AUTO-DIP짰 Switch Automatically Insertable, Wave Solderable, Board Washable DIP Switch 文件：602.94 Kbytes Page：2 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | | ||
Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON | |
MJE210产品属性
- 类型
描述
- 型号
MJE210
- 功能描述
两极晶体管 - BJT PNP Audio Amplifier
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
20+ |
TO-92 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
00+ |
TO-126 |
5390 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
24+ |
TO126 |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
24+ |
5000 |
公司存货 |
|||||
ON |
TO126 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
FAIRCHILD/仙童 |
17+ |
TO-126 |
31518 |
原装正品 可含税交易 |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-225AATO-126 |
24190 |
原装正品代理渠道价格优势 |
|||
ON/安森美 |
24+ |
TO-126 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON |
24+ |
TO-126 |
6430 |
原装现货/欢迎来电咨询 |
|||
CENTRAL |
2402+ |
TO252-3 |
8324 |
原装正品!实单价优! |
MJE210规格书下载地址
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