5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. Features • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc

SILICON PNP TRANSISTOR

DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR

PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)

COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ Ic=-100mA Complementary to MJE200

Feature

Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) • Complement to MJE200

SILICON PNP TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications.

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Low collector-emitter saturation voltage, high current gain bandwidth product, Complement to MJE200. Applications Designed for general audio amplifier applications.

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 40V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 25V 5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Trans GP BJT PNP 25V 5A 3-Pin TO-225 Bulk

双极晶体管

Complementary Silicon Power Plastic Transistors

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SILICON PNP TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co

Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co

Complementary Silicon Power Plastic Transistors

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FAIRCHILD Small Signal Transistors

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Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes Page：6 Pages

Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes Page：6 Pages

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

POWER RECTIFIERS(2.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

POWER RECTIFIERS(2.0A,500-1000V)

Voltage Follower

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