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MJD210价格

参考价格：￥1.0028

型号：MJD210G 品牌：ON 备注：这里有MJD210多少钱，2026年最近7天走势，今日出价，今日竞价，MJD210批发/采购报价，MJD210行情走势销售排行榜，MJD210报价。

型号	功能描述	生产厂家企业	LOGO
MJD210	D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix)	FAIRCHILD 仙童半导体	FAIRCHILD
MJD210	Complementary Plastic Power Transistors Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc • High DC Current Gain − hFE	ONSEMI 安森美半导体	ONSEMI
MJD210	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS ■ DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ■ FEATURE * Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA * High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @	UTC 友顺	UTC
MJD210	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc	MOTOROLA 摩托罗拉	MOTOROLA
MJD210	isc Silicon PNP Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A • Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A • Complement to the NPN MJD200 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low	ISC 无锡固电	ISC
MJD210	Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications	ISC 无锡固电	ISC
MJD210	Bipolar Transistor The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. • Collector-Emitter Sustaining Voltage \n• High DC Current Gain \n• =45 (Min) @ IC=-2A \n• Lead Formed for Surface Mount Applications in \n• Straight Lead Version in Plastic Sleeves (“-1” Suffix) \n• Low Collector – Emitter Saturation Voltage \n• = -0.75V (Max) @ IC = -2.0 A \n• fT = 65 MH;	UTC 友顺	UTC
MJD210	5.0 A, 25 V PNP Bipolar Power Transistor The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices. • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc\n• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc\n• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 A;	ONSEMI 安森美半导体	ONSEMI
MJD210	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘描述：TRANS PNP 25V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJD210	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210-1	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc	MOTOROLA 摩托罗拉	MOTOROLA
MJD210-I	D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix)	FAIRCHILD 仙童半导体	FAIRCHILD
MJD210T4	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc	MOTOROLA 摩托罗拉	MOTOROLA
MJD210_10	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210_15	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G	Complementary Plastic Power Transistors 文件：152.01 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210G	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210G	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210G-TM3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TM3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TN3-R	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TN3-R	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TN3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TN3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TM3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TM3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TN3-R	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TN3-R	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TN3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TN3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210R	功率三极管	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD210RL	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘描述：TRANS PNP 25V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJD210RL	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210RLG	Complementary Plastic Power Transistors 文件：152.01 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210RLG	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210RLG	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4G	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4G	Complementary Plastic Power Transistors 文件：152.01 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4G	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJE210	5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High	MOTOROLA 摩托罗拉	MOTOROLA
MU210	POWER RECTIFIERS(2.0A,500-1000V) Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.	MOSPEC 统懋	MOSPEC
SF210	POWER RECTIFIERS(2.0A,500-1000V)	MOSPEC 统懋	MOSPEC
LM210J	Voltage Follower 文件：348.91 Kbytes Page：16 Pages	NSC 国半	NSC

MJD210产品属性

类型
描述
Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Polarity：
PNP
Type：
General Purpose
VCE(sat) Max (V)：
1.8
IC Cont. (A)：
5
VCEO Min (V)：
25
VCBO (V)：
40
VEBO (V)：
8
VBE(sat) (V)：
2.5
VBE(on) (V)：
1.6
hFE Min：
45
hFE Max：
180
fT Min (MHz)：
3
PTM Max (W)：
12.5
Package Type：
DPAK-3

MJD210供应商更多...

更新时间：2026-5-14 15:25:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市亿联芯电子科技有限公司	MJD210	ON进口原装	2023+	TO-252	8635	全新原装正品,优势价格	询价
深圳市百诺芯科技有限公司	MJD210	ONFAI	23+	TO-252	24190	原装正品代理渠道价格优势	询价
深圳诚思涵科技有限公司	MJD210	ON(安森美)	23+	标准封装	5000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
标准国际(香港)有限公司	MJD210	MOTOROLA	25+		115	公司优势库存热卖中!	询价
深圳市中飞凌科技有限公司	MJD210	ON(安森美)	26+	NA	60000	只有原装可配单	询价
深圳市壹芯创科技有限公司	MJD210	FAIRCHILD	22+	原厂原封	2000	原装现货库存.价格优势	询价
深圳市海天鸿电子科技有限公司	MJD210G	ON	1716+	?	7500	只做原装进口,假一罚十	询价
深圳市纳立科技有限公司	MJD210G		三年内		1983	只做原装正品	询价
深圳市科恒伟业电子有限公司	MJD210RLG	ON/安森美	2450+	TO-252	9850	只做原装正品现货或订货假一赔十!	询价
深圳市俊晖半导体有限公司	MJD210	ON(安森美)	25+	标准封装	8800	公司只做原装,详情请咨询	询价

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找IC，尽在114IC

MJD210价格

MJD210产品属性

MJD210供应商更多...

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MJD210规格书下载地址

MJD210参数引脚图相关

MJD210数据表相关新闻

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MJD127T4 ON原厂授权经销商

MJ11016

mjd31ct4g亚太地区代理商，绝对优势！！

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