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MJD210价格

参考价格:¥1.0028

型号:MJD210G 品牌:ON 备注:这里有MJD210多少钱,2026年最近7天走势,今日出价,今日竞价,MJD210批发/采购报价,MJD210行情走势销售排行榜,MJD210报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD210

D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix)

FAIRCHILD

仙童半导体

MJD210

Complementary Plastic Power Transistors

Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc • High DC Current Gain − hFE

ONSEMI

安森美半导体

MJD210

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

■ DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ■ FEATURE * Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA * High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @

UTC

友顺

MJD210

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

MOTOROLA

摩托罗拉

MJD210

isc Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A • Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A • Complement to the NPN MJD200 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low

ISC

无锡固电

MJD210

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications

ISC

无锡固电

MJD210

Bipolar Transistor

The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. • Collector-Emitter Sustaining Voltage \n• High DC Current Gain \n• =45 (Min) @ IC=-2A \n• Lead Formed for Surface Mount Applications in   \n• Straight Lead Version in Plastic Sleeves (“-1” Suffix) \n• Low Collector – Emitter Saturation Voltage \n• = -0.75V (Max) @ IC = -2.0 A \n• fT = 65 MH;

UTC

友顺

MJD210

5.0 A, 25 V PNP Bipolar Power Transistor

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices. • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc\n• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc\n• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 A;

ONSEMI

安森美半导体

MJD210

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:托盘 描述:TRANS PNP 25V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MJD210

Complementary Plastic Power Transistors

文件:138.05 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJD210

Complementary Plastic Power Transistors

文件:87.9 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJD210

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

MOTOROLA

摩托罗拉

D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix)

FAIRCHILD

仙童半导体

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

MOTOROLA

摩托罗拉

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

Complementary Plastic Power Transistors

文件:152.01 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:138.05 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:87.9 Kbytes Page:6 Pages

ONSEMI

安森美半导体

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件:209.37 Kbytes Page:5 Pages

UTC

友顺

功率三极管

STMICROELECTRONICS

意法半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:托盘 描述:TRANS PNP 25V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:87.9 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:152.01 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:138.05 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:87.9 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:87.9 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:138.05 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:87.9 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:152.01 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件:138.05 Kbytes Page:6 Pages

ONSEMI

安森美半导体

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

MOTOROLA

摩托罗拉

POWER RECTIFIERS(2.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

MOSPEC

统懋

POWER RECTIFIERS(2.0A,500-1000V)

MOSPEC

统懋

Voltage Follower

文件:348.91 Kbytes Page:16 Pages

NSC

国半

MJD210产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    PNP

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    1.8

  • IC Cont. (A):

    5

  • VCEO Min (V):

    25

  • VCBO (V):

    40

  • VEBO (V):

    8

  • VBE(sat) (V):

    2.5

  • VBE(on) (V):

    1.6

  • hFE Min:

    45

  • hFE Max:

    180

  • fT Min (MHz):

    3

  • PTM Max (W):

    12.5

  • Package Type:

    DPAK-3

更新时间:2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
DPAK
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON/安森美
25+
TO-252
32000
ON/安森美全新特价MJD210T4G即刻询购立享优惠#长期有货
ON/安森美
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
ON(安森美)
23+
18416
公司只做原装正品,假一赔十
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ON(安森美)
26+
NA
60000
只有原装 可配单
MOTOROLA
23+
NA
656
专做原装正品,假一罚百!
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
25+
TO-251TO-252
1850
全新原装正品支持含税

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