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MJD210价格

参考价格：￥1.0028

型号：MJD210G 品牌：ON 备注：这里有MJD210多少钱，2026年最近7天走势，今日出价，今日竞价，MJD210批发/采购报价，MJD210行情走势销售排行榜，MJD210报价。

型号	功能描述	生产厂家企业	LOGO
MJD210	D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix)	FAIRCHILD 仙童半导体	FAIRCHILD
MJD210	Complementary Plastic Power Transistors Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc • High DC Current Gain − hFE	ONSEMI 安森美半导体	ONSEMI
MJD210	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS ■ DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ■ FEATURE * Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA * High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @	UTC 友顺	UTC
MJD210	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc	MOTOROLA 摩托罗拉	MOTOROLA
MJD210	isc Silicon PNP Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A • Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A • Complement to the NPN MJD200 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low	ISC 无锡固电	ISC
MJD210	Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications	ISC 无锡固电	ISC
MJD210	Bipolar Transistor The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. • Collector-Emitter Sustaining Voltage \n• High DC Current Gain \n• =45 (Min) @ IC=-2A \n• Lead Formed for Surface Mount Applications in \n• Straight Lead Version in Plastic Sleeves (“-1” Suffix) \n• Low Collector – Emitter Saturation Voltage \n• = -0.75V (Max) @ IC = -2.0 A \n• fT = 65 MH;	UTC 友顺	UTC
MJD210	5.0 A, 25 V PNP Bipolar Power Transistor The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices. • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc\n• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc\n• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 A;	ONSEMI 安森美半导体	ONSEMI
MJD210	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘描述：TRANS PNP 25V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJD210	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210-1	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc	MOTOROLA 摩托罗拉	MOTOROLA
MJD210-I	D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix)	FAIRCHILD 仙童半导体	FAIRCHILD
MJD210T4	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc	MOTOROLA 摩托罗拉	MOTOROLA
MJD210_10	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210_15	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G	Complementary Plastic Power Transistors 文件：152.01 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210G	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210G	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210G-TM3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TM3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TN3-R	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TN3-R	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TN3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210G-TN3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TM3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TM3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TN3-R	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TN3-R	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TN3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210L-TN3-T	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 文件：209.37 Kbytes Page：5 Pages	UTC 友顺	UTC
MJD210R	功率三极管	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD210RL	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘描述：TRANS PNP 25V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJD210RL	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210RLG	Complementary Plastic Power Transistors 文件：152.01 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210RLG	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210RLG	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4G	Complementary Plastic Power Transistors 文件：87.9 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4G	Complementary Plastic Power Transistors 文件：152.01 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD210T4G	Complementary Plastic Power Transistors 文件：138.05 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJE210	5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High	MOTOROLA 摩托罗拉	MOTOROLA
MU210	POWER RECTIFIERS(2.0A,500-1000V) Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.	MOSPEC 统懋	MOSPEC
SF210	POWER RECTIFIERS(2.0A,500-1000V)	MOSPEC 统懋	MOSPEC
LM210J	Voltage Follower 文件：348.91 Kbytes Page：16 Pages	NSC 国半	NSC

MJD210产品属性

类型
描述
Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Polarity：
PNP
Type：
General Purpose
VCE(sat) Max (V)：
1.8
IC Cont. (A)：
5
VCEO Min (V)：
25
VCBO (V)：
40
VEBO (V)：
8
VBE(sat) (V)：
2.5
VBE(on) (V)：
1.6
hFE Min：
45
hFE Max：
180
fT Min (MHz)：
3
PTM Max (W)：
12.5
Package Type：
DPAK-3

MJD210供应商更多...

更新时间：2026-5-14 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	MJD210	onsemi	25+	DPAK	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
中天科工半导体（深圳）有限公司	MJD210T4G	ON/安森美	25+	TO-252	32000	ON/安森美全新特价MJD210T4G即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	MJD210RLG	ON/安森美	2450+	TO-252	9850	只做原装正品现货或订货假一赔十!	询价
深圳市芯球通科技有限公司	MJD210	ON(安森美)	23+		18416	公司只做原装正品,假一赔十	询价
深圳市宇创芯科技有限公司	MJD210	ON(安森美)	24+	N/A	18000	原装正品现货支持实单	询价
深圳市中飞凌科技有限公司	MJD210	ON(安森美)	26+	NA	60000	只有原装可配单	询价
深圳市振宏微科技有限公司	MJD210-001	MOTOROLA	23+	NA	656	专做原装正品,假一罚百!	询价
深圳诚思涵科技有限公司	MJD210	ON(安森美)	23+	标准封装	5000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市正纳电子有限公司	MJD210	ON(安森美)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市创盛芯科技有限公司	MJD210	ON/安森美	25+	TO-251TO-252	1850	全新原装正品支持含税	询价

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找IC，尽在114IC

MJD210价格

MJD210产品属性

MJD210供应商更多...

MJD210芯片相关品牌

MJD210规格书下载地址

MJD210参数引脚图相关

MJD210数据表相关新闻

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MJD44H11RLG 双极晶体管 - 双极结型晶体管(BJT) 8A 80V 20W NPN 进口原装正品

MJD32CT4G

MJD127T4 ON原厂授权经销商

MJ11016

mjd31ct4g亚太地区代理商，绝对优势！！

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