Very high operating temperature capability

Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of

碳化硅功率MOSFET，1200 V、20 A、189 mOhm（典型值，Tj = 150 C），HiP247封装

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Easy to Parallel and Simple to Drive ·Avalanche Ruggedness APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage DC/DC Converters ·Motor drives

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package

Features • Very tight variation of on-resistance vs. temperature • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch

Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 째C), in an HiP247 package

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汽车级碳化硅功率MOSFET，1200 V、20 A、189 mOhm（典型值，Tj = 150 C），HiP247封装

碳化硅功率MOSFET，1200 V、20 A、189 mOhm（典型值，Tj = 150 C），HiP247封装

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

General purpose inverters

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Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

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1200V, 20A Trench IGBT

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1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages