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SCH2价格
参考价格：￥154.0589
型号：SCH2080KEC 品牌：Rohm 备注：这里有SCH2多少钱，2025年最近7天走势，今日出价，今日竞价，SCH2批发/采购报价，SCH2行情走势销售排行榜，SCH2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY HIGH VOLTAGE, HIGH DENSITY, LEADED, SILICON RECTIFIER ASSEMBLY • Low forward voltage drop • Low reverse leakage current • High thermal shock resistance • Corona free construction • Low distributed capacitance | SEMTECH 先之科 |   | ||
NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications NPN Epitaxial Planar Silicon Transistor Features • Composite type with 2 NPN transistors contained in a single package, facilitating high-density mounting. • Ultrasmall package permitting applied sets to be small and slim. Applications • Low-frequency General-Purpose amplifier, high-speed swi | SANYO 三洋 | | ||
NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications NPN Epitaxial Planar Silicon Transistor Features • Composite type with 2 NPN transistor contained in a single package, facilitating high-density mounting. • Ultrasmall package permitting applied sets to be small and slim. • Small ON-resistance (Ron). Applications • Low-frequency power amplif | SANYO 三洋 | | ||
Bipolar Transistor Bipolar Transistor 15V, 0.6A, Low VCE(sat) NPN Single SCH6 Features • Composite type with 2 NPN transistor contained in a single package, facilitating high-density mounting • Ultrasmall package permitting applied sets to be small and slim • Small ON-resistance (Ron) Applications • Low-frequ | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Bipolar Transistor 15V, 0.6A, Low VCE(sat) NPN Single SCH6 Features • Composite type with 2 NPN transistor contained in a single package, facilitating high-density mounting • Ultrasmall package permitting applied sets to be small and slim • Small ON-resistance (Ron) Applications • Low-frequ | ONSEMI 安森美半导体 | | ||
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY HIGH VOLTAGE, HIGH DENSITY, LEADED, SILICON RECTIFIER ASSEMBLY • Low forward voltage drop • Low reverse leakage current • High thermal shock resistance • Corona free construction • Low distributed capacitance | SEMTECH 先之科 | | ||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel silicon MOSFET (SCH1407) and a schottky barrier diode (SS05015) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc | SANYO 三洋 | | ||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel sillicon MOSFET (SCH1412) and a schottky barrier diode (SS0503) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed swit | SANYO 三洋 | | ||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc | SANYO 三洋 | | ||
General-Purpose Switching Device Applications MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc | ONSEMI 安森美半导体 | | ||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V driv | SANYO 三洋 | | ||
SCH2816 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel silicon MOSFET (SCH1416) and a Schottky barrier diode (SS05015) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed swit | SANYO 三洋 | | ||
MOSFET , SBD MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-Channel Silicon MOSFET (SCH1417) and a Schottky Barrier Diode (SS05015SH) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed swi | SANYO 三洋 | | ||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switch | SANYO 三洋 | | ||
General-Purpose Switching Device Applications MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switch | ONSEMI 安森美半导体 | | ||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V driv | SANYO 三洋 | | ||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V dri | SANYO 三洋 | | ||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V dri | SANYO 三洋 | | ||
封装/外壳：轴向 包装：散装 描述：DIODE GP 20KV 500MA AXIAL 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
20A, 1200V SiC Schottky Barrier Diode | SUNNYCHIP 晟芯半导体 | | ||
20A, 650V SiC Schottky Barrier Diode | SUNNYCHIP 晟芯半导体 | | ||
SiC MOSFET | ROHM 罗姆 | | ||
N-channel SiC power MOSFET co-packaged with SiC-SBD 文件：493.73 Kbytes Page：13 Pages | ROHM 罗姆 | | ||
N-channel SiC power MOSFET 文件：822.18 Kbytes Page：14 Pages | ROHM 罗姆 | | ||
N-channel SiC power MOSFET 文件：822.18 Kbytes Page：14 Pages | ROHM 罗姆 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：59.34 Kbytes Page：4 Pages | SANYO 三洋 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：59.31 Kbytes Page：4 Pages | SANYO 三洋 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：59.33 Kbytes Page：4 Pages | SANYO 三洋 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：59.28 Kbytes Page：4 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：45.45 Kbytes Page：4 Pages | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device 文件：56.34 Kbytes Page：4 Pages | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：58.69 Kbytes Page：4 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：100.09 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：57.21 Kbytes Page：4 Pages | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：59.33 Kbytes Page：4 Pages | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：58 Kbytes Page：4 Pages | SANYO 三洋 | | ||
封装/外壳：轴向 包装：散装 描述：DIODE GP 25KV 500MA AXIAL 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
HAZARDOUS LOCATION ALARM 文件：56.53 Kbytes Page：1 Pages | MSPI 马洛里 | | ||
Voltage Rating 60 to 250 VAC/DC 文件：56.28 Kbytes Page：1 Pages | MSPI 马洛里 | | ||
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device 文件：53.06 Kbytes Page：6 Pages | SANYO 三洋 | | ||
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device 文件：70.07 Kbytes Page：6 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：111.61 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications 文件：47.69 Kbytes Page：6 Pages | SANYO 三洋 | | ||
SCH2812 文件：65.03 Kbytes Page：5 Pages | SANYO 三洋 | | ||
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device 文件：56.89 Kbytes Page：6 Pages | SANYO 三洋 | | ||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device 文件：50.36 Kbytes Page：6 Pages | SANYO 三洋 | | ||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device 文件：50.36 Kbytes Page：6 Pages | SANYO 三洋 | | ||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device 文件：50.67 Kbytes Page：6 Pages | SANYO 三洋 | | ||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device 文件：50.67 Kbytes Page：6 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：72.38 Kbytes Page：6 Pages | SANYO 三洋 | | ||
N-Channel Power MOSFET 文件：294.72 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
SCH2产品属性
- 类型
描述
- 型号
SCH2
- 制造商
Hubbell Wiring Device-Kellems
- 功能描述
WALLPLATE, 2-G, 2) TOG, CHR PLT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
ROHM/罗姆 |
25+ |
TO247-3 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM/罗姆 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
ROHM |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ROHM |
22+ |
TO-247 |
20000 |
公司只做原装 品质保障 |
|||
ROHM |
SMDDIP |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ROHMSEMICONDUCTOR |
1913 |
286 |
原装现货支持BOM配单服务 |
||||
ROHM |
23+ |
TO-247 |
223 |
全新原装正品现货,支持订货 |
|||
Rohm Semiconductor |
23+ |
TO2473 |
7000 |
||||
ROHM |
24+ |
原厂正品 |
5850 |
原装正品金芯阳科技自家库存欢迎询价QQ:2698954303 |
SCH2规格书下载地址
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