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SCH2价格
参考价格:¥154.0589
型号:SCH2080KEC 品牌:Rohm 备注:这里有SCH2多少钱,2024年最近7天走势,今日出价,今日竞价,SCH2批发/采购报价,SCH2行情走势销售排行榜,SCH2报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY HIGHVOLTAGE,HIGHDENSITY,LEADED,SILICONRECTIFIERASSEMBLY •Lowforwardvoltagedrop •Lowreverseleakagecurrent •Highthermalshockresistance •Coronafreeconstruction •Lowdistributedcapacitance | SEMTECH Semtech Corporation | |||
NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications NPNEpitaxialPlanarSiliconTransistor Features •Compositetypewith2NPNtransistorscontainedinasinglepackage,facilitatinghigh-densitymounting. •Ultrasmallpackagepermittingappliedsetstobesmallandslim. Applications •Low-frequencyGeneral-Purposeamplifier,high-speedswi | SANYOSanyo 三洋三洋电机株式会社 | |||
NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications NPNEpitaxialPlanarSiliconTransistor Features •Compositetypewith2NPNtransistorcontainedinasinglepackage,facilitatinghigh-densitymounting. •Ultrasmallpackagepermittingappliedsetstobesmallandslim. •SmallON-resistance(Ron). Applications •Low-frequencypoweramplif | SANYOSanyo 三洋三洋电机株式会社 | |||
Bipolar Transistor BipolarTransistor 15V,0.6A,LowVCE(sat)NPNSingleSCH6 Features •Compositetypewith2NPNtransistorcontainedinasinglepackage,facilitatinghigh-densitymounting •Ultrasmallpackagepermittingappliedsetstobesmallandslim •SmallON-resistance(Ron) Applications •Low-frequ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Bipolar Transistor BipolarTransistor 15V,0.6A,LowVCE(sat)NPNSingleSCH6 Features •Compositetypewith2NPNtransistorcontainedinasinglepackage,facilitatinghigh-densitymounting •Ultrasmallpackagepermittingappliedsetstobesmallandslim •SmallON-resistance(Ron) Applications •Low-frequ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY HIGHVOLTAGE,HIGHDENSITY,LEADED,SILICONRECTIFIERASSEMBLY •Lowforwardvoltagedrop •Lowreverseleakagecurrent •Highthermalshockresistance •Coronafreeconstruction •Lowdistributedcapacitance | SEMTECH Semtech Corporation | |||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithanN-channelsiliconMOSFET(SCH1407)andaschottkybarrierdiode(SS05015)containedinonepackagefacilitatinghigh-densitymounting. [MOSFET] •LowON-resistance. •Ultrahigh-speedswitc | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithanN-channelsilliconMOSFET(SCH1412)andaschottkybarrierdiode(SS0503)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswit | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-channelsilliconMOSFET(SCH1305)andaSchottkybarrierdiode(SBS018)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswitc | SANYOSanyo 三洋三洋电机株式会社 | |||
General-Purpose Switching Device Applications MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-channelsilliconMOSFET(SCH1305)andaSchottkybarrierdiode(SBS018)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswitc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-channelsilliconMOSFETandaSchottkybarrierdiodecontainedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswitching. •4Vdriv | SANYOSanyo 三洋三洋电机株式会社 | |||
SCH2816 MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithanN-channelsiliconMOSFET(SCH1416)andaSchottkybarrierdiode(SS05015)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswit | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET , SBD MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaN-ChannelSiliconMOSFET(SCH1417)andaSchottkyBarrierDiode(SS05015SH)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswi | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaN-ChannelSiliconMOSFET(SCH1419)andaSchottkyBarrierDiode(SS0503)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswitch | SANYOSanyo 三洋三洋电机株式会社 | |||
General-Purpose Switching Device Applications MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaN-ChannelSiliconMOSFET(SCH1419)andaSchottkyBarrierDiode(SS0503)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswitch | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithanN-channelsiliconMOSFETandaschottkybarrierdiodecontainedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswitching. •4Vdriv | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-channelsiliconMOSFETandaschottkybarrierdiodecontainedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdri | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-channelsiliconMOSFETandaschottkybarrierdiodecontainedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswitching. •1.8Vdri | SANYOSanyo 三洋三洋电机株式会社 | |||
封装/外壳:轴向 包装:散装 描述:DIODE GP 20KV 500MA AXIAL 分立半导体产品 二极管 - 整流器 - 单 | SEMTECH Semtech Corporation | |||
N-channel SiC power MOSFET co-packaged with SiC-SBD 文件:493.73 Kbytes Page:13 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
N-channel SiC power MOSFET 文件:822.18 Kbytes Page:14 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
N-channel SiC power MOSFET 文件:822.18 Kbytes Page:14 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件:59.34 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件:59.31 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件:59.33 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件:59.28 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
General-Purpose Switching Device Applications 文件:45.45 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-Channel Silicon MOSFET General-Purpose Switching Device 文件:56.34 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件:58.69 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
General-Purpose Switching Device Applications 文件:100.09 Kbytes Page:4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件:57.21 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件:59.33 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件:58 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
封装/外壳:轴向 包装:散装 描述:DIODE GP 25KV 500MA AXIAL 分立半导体产品 二极管 - 整流器 - 单 | SEMTECH Semtech Corporation | |||
HAZARDOUS LOCATION ALARM 文件:56.53 Kbytes Page:1 Pages | MSPIMallory Sonalert Products Inc 马洛里马洛里索纳特产品有限公司 | |||
Voltage Rating 60 to 250 VAC/DC 文件:56.28 Kbytes Page:1 Pages | MSPIMallory Sonalert Products Inc 马洛里马洛里索纳特产品有限公司 | |||
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device 文件:53.06 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device 文件:70.07 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
General-Purpose Switching Device Applications 文件:111.61 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
General-Purpose Switching Device Applications 文件:47.69 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
SCH2812 文件:65.03 Kbytes Page:5 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device 文件:56.89 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device 文件:50.36 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device 文件:50.36 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device 文件:50.67 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device 文件:50.67 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
General-Purpose Switching Device Applications 文件:72.38 Kbytes Page:6 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-Channel Power MOSFET 文件:294.72 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
SCH2产品属性
- 类型
描述
- 型号
SCH2
- 制造商
Hubbell Wiring Device-Kellems
- 功能描述
WALLPLATE, 2-G, 2) TOG, CHR PLT
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM |
14+ |
TO-3P |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ROHM/罗姆 |
18+ |
TO247-3 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM/罗姆 |
23+ |
NA/ |
3443 |
原厂直销,现货供应,账期支持! |
|||
ROHMSEMICONDUCTOR |
1913 |
286 |
原装现货支持BOM配单服务 |
||||
Rohm Semiconductor |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
|||
ROHM-罗姆 |
24+25+/26+27+ |
SOT-323 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ROHM |
TO-247 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ROHM |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
ROHM |
23+ |
TO247 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
SEMTECH |
1706+ |
A1PHHW500MASTD20KV |
5800 |
只做原装进口,假一罚十 |
SCH2规格书下载地址
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SCH2数据表相关新闻
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2021-4-27SCF6C60
SCF6C60,当天发货0755-82732291全新原装现货或门市自取.
2020-8-30
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