MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V dri

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS

The RF Line Wideband Linear Amplifier . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature and linear amplification as a result of the push–pull circuit design. •

34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS

The RF Line Wideband Linear Amplifier . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature and linear amplification as a result of the push–pull circuit design. •

Photo Modules for PCM Remote Control Systems

Description The TSOP28.. – series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the

FAST SYNCHRONOUS-BUCK MOSFET DRIVERS WITH DEADTIME CONTROL

文件：198.98 Kbytes Page：15 Pages

FAST SYNCHRONOUS-BUCK MOSFET DRIVERS WITH DEADTIME CONTROL

文件：198.98 Kbytes Page：15 Pages