SiC MOSFET

基于SiC的平面型MOSFET。（SiC-SBD一体型） 其特征是高耐压、低导通电阻、高速开关。 •High-speed switching\n•Low ON resistance\n•Low body diode Qrr and trr\n•Ensured reliability of body diode conduction\n•SiC SBD co-packed;

N-channel SiC power MOSFET

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N-channel SiC power MOSFET co-packaged with SiC-SBD

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N-channel SiC power MOSFET

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SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

Integrated Circuit 7-Stage Driver Array

Features: • Low Output Saturation Voltage • Protective Diodes Guard Against Negative Inputs • Spark Killer Diodes Accommodate L–Loads • Eqipped with a Strobe Terminal to Cut Off Outputs • With 7 Units, it is Ideal for 14–Digit Printers Applications: • Driving Battery–Operate

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR20100CT series is supplied in the SOT78

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For