General-Purpose Switching Device Applications

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc

General-Purpose Switching Device Applications

Multi-Rate to 2.7Gbps Clock and Data Recovery IC with Limiting Amplifier

PRODUCT DESCRIPTION The ADN2809 provides the receiver functions of Quantization, Signal Level Detect and Clock and Data Recovery at rates of OC-3, OC-12, Gigabit Ethernet, OC-48 and all FEC rates. All SONET jitter requirements are met, including: Jitter Transfer; Jitter Generation; and Jitter Tol

Multi-Rate to 2.7Gbps Clock and Data Recovery IC with Limiting Amplifier

PRODUCT DESCRIPTION The ADN2809 provides the receiver functions of Quantization, Signal Level Detect and Clock and Data Recovery at rates of OC-3, OC-12, Gigabit Ethernet, OC-48 and all FEC rates. All SONET jitter requirements are met, including: Jitter Transfer; Jitter Generation; and Jitter Tol

Multi-Rate to 2.7Gbps Clock and Data Recovery IC with Limiting Amplifier

PRODUCT DESCRIPTION The ADN2809 provides the receiver functions of Quantization, Signal Level Detect and Clock and Data Recovery at rates of OC-3, OC-12, Gigabit Ethernet, OC-48 and all FEC rates. All SONET jitter requirements are met, including: Jitter Transfer; Jitter Generation; and Jitter Tol

NOCAP 135 mW Stereo Headphone Power Amplifier

文件：186.79 Kbytes Page：22 Pages

NOCAP 135 mW Stereo Headphone Power Amplifier

文件：186.79 Kbytes Page：22 Pages